The College of Education for Pure Sciences, Department of Physics, organized a scientific lecture entitled "Studying the Electronic and Magnetic Semimetallic Properties of Tetravalent Heusler Compounds." The lecture, presented by researcher Ali Abdul Hussein Nasser, aimed to develop a semimetallic material by studying the electronic and magnetic properties of tetravalent Heusler compounds, given the significant importance of these materials in spin electronics applications.
We studied the CoFeCrP compound at an equilibrium constant of 5.9 Å using a primary-principles method based on density functional theory (DFT). We observed that, under bulk conditions, CoFeCrP maintained its semimetallic behavior, exhibiting semiconducting properties when the spin-down state was reversed, while the spin-up state exhibited metallic properties. The surface properties of the CoFeCrP composite were also studied. For surface (111), we selected 17 layers, and for surface (001), we selected 13 layers. For surface (110), we selected 7 layers, which were sufficient to study the electronic and magnetic properties. We performed relaxation on four layers for each of the selected surfaces to bring the composite to a stable state. After calculating the density of states (DOS) and the band structure of the terminals that appeared at each surface, we observed that the composite still retained its semimetallic properties at some terminals, exhibiting the same behavior: a metal in the upward spin state and a semiconductor in the downward spin state. The changes observed were a shift in the magnetic moment values of the surfaces from their bulk values, as well as a change in the energy gap at each surface.
The interface between CoFeCrP and GaAs at surface (111) was also studied. This study included identifying the properties of semi-metallic materials, especially Heusler quaternary compounds, due to the importance of these materials as they are considered promising materials because of their importance in applications for spin electronics devices
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